To provide a BAW resonator for increasing an electro-mechanical coupling coefficient compared with when a piezoelectric layer is constituted of an AlN thin film, and increasing a mechanical quality coefficient compared with when the piezoelectric layer is constituted of a PZT thin film, and to provide its production method.
A BAW resonator includes a supporting substrate 1 and a resonator 2, provided on one surface side of the supporting substrate 1, including a lower electrode 20, a piezoelectric layer 30 and an upper electrode 40. The piezoelectric layer 30 is constituted of a piezoelectric thin film including a multi-component perovskite structure constituted of PZT and relaxer perovskite (e.g., PMN-PZT thin film). In a piezoelectric layer forming step, when forming the piezoelectric layer 30 by a sputtering method, the piezoelectric thin film is hetero-epitaxially grown on the one surface side of the supporting substrate 1 by increasing a temperature of the supporting substrate 1 to a specific temperature of 500C or higher, and the supporting substrate 1 is rapidly cooled down from the specific temperature thereafter.
MATSUSHIMA CHOMEI
YAMAUCHI NORIHIRO
HAYAZAKI YOSHIKI
YOSHIHARA TAKAAKI
SHIRAI TAKEO
JP2005328007A | 2005-11-24 | |||
JP2005353755A | 2005-12-22 | |||
JP2005353756A | 2005-12-22 | |||
JP2006032628A | 2006-02-02 | |||
JP2006069837A | 2006-03-16 | |||
JP2006086368A | 2006-03-30 | |||
JPH06350154A | 1994-12-22 | |||
JP2005328006A | 2005-11-24 | |||
JP2005079993A | 2005-03-24 | |||
JP2007295307A | 2007-11-08 | |||
JP2007295025A | 2007-11-08 | |||
JPH06350154A | 1994-12-22 | |||
JP2005328006A | 2005-11-24 | |||
JP2005079993A | 2005-03-24 | |||
JP2007295307A | 2007-11-08 | |||
JP2007295025A | 2007-11-08 | |||
JP2005328007A | 2005-11-24 | |||
JP2005353755A | 2005-12-22 | |||
JP2005353756A | 2005-12-22 | |||
JP2006032628A | 2006-02-02 | |||
JP2006069837A | 2006-03-16 | |||
JP2006086368A | 2006-03-30 |
Atsuo Mori