PURPOSE: To form the film thickness of a capacitor insulating film into a thin film by a method wherein an upper electrode containing a Ptype polycrystalline silicon film is provided, a metal film is provided in a node contact hole, which reaches an N-type diffused layer, and a lower electrode consisting of a P-type polycrystalline silicon film is connected to the metal film.

CONSTITUTION: A field oxide film 13a and a gate oxide film 15a are respectively formed selectively on the surface of a substrate 11a. Then, after a gate electrode 17a is formed, N-type diffused layers 19Aa and 19Ba are formed. After an interlayer insulating film 21a is formed on the entire surface, a node contact hole 23a, which penetrates this film 21a and reaches the layer 19Aa, is formed. Moreover, a metal film 31a is formed in the hole 23a and a P-type polycrystalline silicon film 33aa is deposited. Subsequently, a silicon nitride film 41a is deposited and a silicon oxide film 43a is formed on the surface of the film 41a. Lastly, a P-type polycrystalline silicon film 51a, which is formed into an upper electrode, is formed on the whole surface of the film 43a. As a result, the film thickness of a capacitor insulating film can be formed into a thin film.