To provide a capacitor of a semiconductor device which is capable of securing an area effectively without dispersion in a limited charge storage electrode capacity, and its manufacturing method.

A capacitor of a semiconductor device is provided with an SiO2 interlayer film 22 and an SiN interlayer insulation film 23 formed to enclose a first polycrystalline silicon film 25 connected onto an Si board conductive layer 21, a cylindrical charge storage electrode consisting of a second polycrystalline silicon film 28, which is connected to the first polycrystalline silicon film 25 and has fine unevenness only in its inner wall and inner bottom part and whose upper part and an outer wall part are flat, a capacity insulation film 31 formed on the surface of the cylindrical charge storage electrode and a third polycrystalline silicon film 32 which becomes a counter electrode of the cylindrical charge storage electrode.