To improve the flatness of a machined substrate that is obtained when a substrate of a large diameter is subjected to chemical mechanical polishing with a polishing pad of a small diameter.
In this chemical mechanical polisher, the substrate having a metal film or a device on a surface is retained in a chuck while the surface of the metal film or that of an insulating film faces upward, the surface of a polishing pad applied onto a mounting plate supported by a spindle shaft where an axis core is provided in a vertical direction to the substrate is pressed via abrasive, the chuck for retaining the substrate and the polishing pad slid, and at the same time the polishing pad reciprocates in a horizontal direction on the substrate for eliminating at least one part of the metal or insulating film on the surface of the substrate. In this case, on the extended horizontal surface of the surface of the substrate retained by the chuck, a guide member is provided independently of the chuck, where the guide member supports the surface of the polishing pad projecting from the outer periphery of the substrate while the polishing pad rocks on the substrate.
TANAKA KIYOSHI
SASAKI NAOKI
Next Patent: POLISHING PAD