CHEMICAL AND MECHANICAL POLISHING METHOD AND CHEMICAL AND MECHANICAL POLISHING DEVICE

Title:

CHEMICAL AND MECHANICAL POLISHING METHOD AND CHEMICAL AND MECHANICAL POLISHING DEVICE

Document Type and Number:

Japanese Patent JP3745951

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a chemical and mechanical polishing method, and a chemical and mechanical polishing device with which the polishing time can be found, without having to use complicated calculations and the planarization of different types of base patterns of different area density can be performed by one polishing step.
SOLUTION: An interlayer film 3, which is formed for covering a base pattern 1 on a substrate 2 and has a protrusion 3a corresponding to the base pattern 1 is planarized, by polishing for a previously calculated time t from the start of polishing, until the completion. The time t, from the start of polishing until the completion, is calculated on the basis of a polishing rate SRRp and a polishing rate SRRs, on the assumption that the value of the polishing rate SRRp from the start until the disappearance of the protrusion 3a is in proportion to the polishing rate SRRs from the disappearance of the protrusion 3a, until the thickness of the interlayer film 3 reaches the predetermined value and is inversely proportional to an index function Dk, whose base is the area density D.

Inventors:

Masashi Hamanaka
Shin Hashimoto

Application Number:

JP2000294016A

Publication Date:

February 15, 2006

Filing Date:

September 27, 2000

Export Citation:

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