酸化ジルコニウム膜とPZT膜との積層体及びこれを備えた半導体装置

Japanese Patent JP3745950

B2

PROBLEM TO BE SOLVED: To provide a ferroelectric film which has a small leakage current and is tolerable to practical use, and also provide a semiconductor device provided with this film on an insulator. SOLUTION: The ferroelectric film formed on the insulator is formed of lead titanate or is a solid solution containing lead titanate, and is a polycrystalline substance having a perovskite structure with the crystal grain diameter between 50 nm and 1000 nm. The material of which the ferroelectric film is formed of is a crystalline one having a columnar structure, with a priority orientation of a (001) surface, and having a trigonal crystal system. The semiconductor device has an MFIS structure. In order to manufacture the semiconductor device, titanium or a titanium oxide is formed into an insular shape on an insulator substrate or a substrate formed with an insulation film, in an equivalent thickness of at least 3 nm and at most 8 nm, and then lead titanate or a solid solution containing lead titanate is formed on the titanium or titanium oxide film.

JP2003282843	FERROELECTRIC FILM AND SEMICONDUCTOR DEVICE
JP4773746	Booster circuit
JPS5649570	SEMICONDUCTOR MEMORY AND ITS MANUFACTURING PROCESS

Katsuto Shimada
Masami Murai

JP2000273455A

February 15, 2006

September 08, 2000

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Seiko Epson Corporation

H01L21/8247; H01L27/105; H01L21/8246; H01L29/788; H01L29/792

JP2000277704A
JP2001110997A
JP689986A
JP2000208715A
JP200068468A
JP10214945A
JP200082784A
JP1012833A

Yoshiyuki Inaba
Katsuro Tanaka
Shinji Oga

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