To provide a CMR layer of a CMOS integrated circuit by a method that can be commercially achieved in a manufacturing method of the CMR layer in the CMOS integrated circuit, including CMP of the CMR layer in a manufacturing process.
A forming method for forming a CMR layer in a CMOS device, using CMP (chemical mechanical polishing) for patterning the CMR layer comprises a step of preparing a silicon substrate including the formation of a lower electrode in the silicon substrate; a step of depositing an SiNx layer on the silicon substrate; a step of patterning and etching the SiNx layer for forming a damascene trench on the lower electrode; a step of depositing a CMR material layer on the SiNx layer and the damascene trench; a step of removing the CMR material layer, covering the SiNx layer by CMP and leaving the CMR material layer in the damascene trench; and a step of completing a CMOS structure.
EVANS DAVID R
BURMASTER ALLEN
