To solve the problems that, in a chemical vapor deposition method of ionizing an organometallic compound gas and irradiating a substrate therewith, when the molecular weight of the organometallic compound is high, and the molecules having a large number of constitutive elements are ionized, the kinds of the produced organometallic ions are many and the molecular weights are various, so that the velocity is not uniform owing to acceleration and deceleration by electric fields or magnetic fields, and deposited film quality is inferior and efficiency is also inferior by methods with thermal electronic irradiation or plasma.
An ionized reagent gas is mixed with an organometallic compound gas as a gaseous starting material, so that the MO compound gas is ionized. The objective organometallic compound ions are subjected to mass separation and are applied to a substrate with the velocity controlled.
Katsuhiro Ito
Ishibashi Masayuki
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