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Title:
CHEMICAL VAPOR DEPOSITION METHOD
Document Type and Number:
Japanese Patent JP2004018969
Kind Code:
A
Abstract:

To obtain a film of high quality which has high crystallinity and comprises a low content of impurities at a relatively low substrate heating temperature in a chemical vapor deposition method of depositing an object film using a metal dpm (dipivaloyl methanate) complex as an MO (organometal) gaseous starting material.

A substrate is irradiated with an ion beam comprising metal dpm complex ions obtained by ionizing a dipivaloyl methanate complex of metal M to deposit a film comprising the metal element M on the substrate.


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Inventors:
YABUTA HISATO
Application Number:
JP2002177218A
Publication Date:
January 22, 2004
Filing Date:
June 18, 2002
Export Citation:
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Assignee:
CANON KK
International Classes:
C23C16/40; H01L21/316; (IPC1-7): C23C16/40; H01L21/316
Attorney, Agent or Firm:
Nobuyuki Kaneda
Katsuhiro Ito
Ishibashi Masayuki



 
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