Title:
CMOS SOLID STATE IMAGE PICKUP DEVICE, ITS MANUFACTURING METHOD AND DRIVE METHOD THEREOF
Document Type and Number:
Japanese Patent JP2006093319
Kind Code:
A
Abstract:
To increase the amount of saturation signals while controlling the generation of a white blemish and the generation of a dark current caused by a crystal defect in a CMOS solid state image pickup device.
Adjacent regions between pixels 2A and 2B are isolated by an isolation means 82 which comprises a diffusion layer 43 and an insulating film 44 on it. The CMOS solid state image pickup device is configured so that a position to be formed may be equivalent to a position 45j of the pn junction by the side of an accumulation layer 39 of a photoelectric conversion section 38 wherein the insulating film 44 of the isolation means 82 constitutes a pixel, or it may be formed in a position shallower than the position 45j of the pn junction.
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Inventors:
ABE HIDEJI
TAYA KEIJI
ITONAGA SOICHIRO
TAYA KEIJI
ITONAGA SOICHIRO
Application Number:
JP2004275461A
Publication Date:
April 06, 2006
Filing Date:
September 22, 2004
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L27/146
Domestic Patent References:
| JP2004235609A | 2004-08-19 | |||
| JP2002057316A | 2002-02-22 | |||
| JP2004193547A | 2004-07-08 | |||
| JP2003188367A | 2003-07-04 | |||
| JP2001053260A | 2001-02-23 | |||
| JP2004165462A | 2004-06-10 | |||
| JP2003258229A | 2003-09-12 |
Attorney, Agent or Firm:
Yoshitsuno Kakuda
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