Title:
レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、パターニングされた基板の製造方法並びに化合物
Document Type and Number:
Japanese Patent JP7207321
Kind Code:
B2
Abstract:
A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Ar1 represents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Ar2 is a group bonding to a carbon atom of the aromatic heteroring in Ar1 and represents an aromatic carbocyclic group having 6 to 20 ring atoms and having a valency of (n+1) or an aromatic heterocyclic group having 5 to 20 ring atoms and having a valency of (n+1); n is an integer of 0 to 12; and R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a halogen atom, or a nitro group.Ar1Ar2R1)n)m (1)
Inventors:
Naoya Nosaka
Hiroshi Matsumura
Daiki Nakatsu
Kazunori Takanashi
Nakagawa Taiki
Hiroshi Matsumura
Daiki Nakatsu
Kazunori Takanashi
Nakagawa Taiki
Application Number:
JP2019554183A
Publication Date:
January 18, 2023
Filing Date:
November 07, 2018
Export Citation:
Assignee:
JSR CORPORATION
International Classes:
G03F7/11; G03F7/40; H01L21/027
Domestic Patent References:
| JP2016018093A | ||||
| JP2005532273A | ||||
| JP2007114452A | ||||
| JP10251273A |
Foreign References:
| KR1020100136227A |
Attorney, Agent or Firm:
Yoshinori Ikeda
Amano Kazunori
Amano Kazunori