COMPOUND SEMICONDUCTOR DEVICE

Japanese Patent JPH01120012

A

PURPOSE:To form a III-V compound semiconductor of good quality on a silicon sub strate so that the integration of optical circuits and electronic circuits, and so forth are enabled, by employing a specific structure in which an InxGa1-xP layer is grown on the silicon substrate with the parts of the component x thereof being progressively increased, and the III-V compound semiconductor layers are formed on the InxGa1-xP layer in order to form a device section therein. CONSTITUTION:A first semiconductor layer 2 of InxGa1-xP semiconductor is formed on a silicon substrate 1 with the parts of the component x being progressively increased from the x=0, approximately. Second semiconductor layers 3-5 of a III-V compound semiconductor are then formed on the first semiconductor layer 2, respectively, in order to form a semiconductor device section therein. For example, an n type InxGax-1P layer 2, which has such a graded composition in that the parts of the component x is gradually increased from x=0, approximately, at the lower surface in contact with the silicon substrate 1 from the lower surface to the upper surface, is first pro vided on the silicon substrate 1. Then, an n type AlyGazIn(1-y-z)P layer 3, an active layer 4 of AlyGazIn(1-y-z) layer or InxGa1-xP layer, a p type AlyGazIn(1-y-z)P layer 5, n and p type buried layers 6, 7 of AlyGazIn(1-y-z)P layer, and n and p type electrode layers 8, 9 are provided, respectively. Thereby a buried type laser is produced.

SERIZAWA AKIYUKI
HORI YOSHIKAZU

JP27763287A

May 12, 1989

November 02, 1987

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MATSUSHITA ELECTRIC IND CO LTD

H01L21/20; H01L23/29; H01L23/31; H01L27/15; H01L29/205; H01S5/00; H01S5/026; (IPC1-7): H01L21/20; H01L23/30; H01L29/205; H01S3/18

JPS5753928A

1982-03-31

Tomoyuki Takimoto (1 person outside)

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