Title:
COMPOUND SEMICONDUCTOR AND SEMICONDUCTOR OPTICAL DEVICE
Document Type and Number:
Japanese Patent JP3825652
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a compound semiconductor which suppresses the occurrence of leak current and exhibits a high reliability and to provide a semiconductor optical device which uses it as an embedded layer.
SOLUTION: Both sides of a vertical mesa stripe structure which is formed in an optical modulator are filled with an embedded layer 3a of InAlAs to which Ru is added.
Inventors:
Susumu Kondo
Etsuo Noguchi
Masahiro Yuda
Ken Tsuzuki
Satoshi Oku
Etsuo Noguchi
Masahiro Yuda
Ken Tsuzuki
Satoshi Oku
Application Number:
JP2001119443A
Publication Date:
September 27, 2006
Filing Date:
April 18, 2001
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L21/205; H01S5/22; (IPC1-7): H01S5/22; //H01L21/205
Domestic Patent References:
| JP9018079A | ||||
| JP8255950A | ||||
| JP9214045A | ||||
| JP6177487A | ||||
| JP61290790A | ||||
| JP61230388A | ||||
| JP2000216500A | ||||
| JP2000333287A | ||||
| JP2001352131A | ||||
| JP2001237498A |
Other References:
Applied Physics Letters,1998年,Vol.73,No.26,p.3878-3880
11th International Conference on Indium Phosphide and Related Materials,1999年,TuB1-2,p.203-206
11th International Conference on Indium Phosphide and Related Materials,1999年,TuB1-2,p.203-206
Attorney, Agent or Firm:
Takumi Iritono
Yasushi Motoyama
Yasushi Motoyama
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