Title:
CRYSTAL GROWTH APPARATUS
Document Type and Number:
Japanese Patent JPS61137315
Kind Code:
A
Abstract:
PURPOSE:To uniformly supply a gas to the substrate surface, by providing a cutting like a wedge toward the center from the circumference of a disk type substrate holding base and allow a part of gas to flow in the circumferential direction. CONSTITUTION:A circular carbon plate 1 is separated by giving cuttings 2. The crystal substrates 3 are arranged on the separated regions. The specified position of a quartz reaction tube 4 is supported by a quartz axis 5 and the axis 5 is rotated at the specified speed. A base 1 is heated by supplying the power to a high frequency coil 6a and the substrate 3 is kept at the specified temperature. The raw material gas is supplied from a plurality of nozzles 7 provided on the same circumference of the center position of the substrate 3. According to this structure, the gas supplied from the nozzles 7 flows to the substrate 3, forming the flow to the circumference and lower side of cutting. Thereby, the convection in the reaction tube is partly cancelled and the raw material gas can be uniformly supplied to the substrate surface. Thereby, the layer in the uniform thickness can be obtained on a plurality of substrates.
Inventors:
OKI YOSHIMASA
Application Number:
JP26026684A
Publication Date:
June 25, 1986
Filing Date:
December 10, 1984
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Toshio Nakao