DEPOSITION OF GROUP III-NITRIDES ON GE

Title:

DEPOSITION OF GROUP III-NITRIDES ON GE

Document Type and Number:

Japanese Patent JP2012116751

Kind Code:

A

Abstract:

To provide a group Ill-nitride/substrate structure formed by a method for obtaining the group Ill-nitride, e.g. GaN layer with good crystal quality and to provide a semiconductor device comprising at least one such structure.

The present invention provides the method for depositing or growing the group Ill-nitride layer, e.g. GaN layer 5, on a substrate 1, the substrate 1 comprising at least a Ge surface 3, preferably with hexagonal symmetry. The method comprises steps of: heating the substrate 1 to a nitridation temperature between 400°C and 940°C while exposing the substrate 1 to a nitrogen gas flow; and subsequently depositing the group Ill-nitride, e.g. GaN layer 5, onto the Ge surface 3 at a deposition temperature between 100°C and 940°C.

Inventors:

LIETEN RUBEN
DEGROOTE STEFAN

Application Number:

JP2012012665A

Publication Date:

June 21, 2012

Filing Date:

January 25, 2012

Export Citation:

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Assignee:

IMEC
UNIV BRUSSEL VRIJE

International Classes:

C30B29/38; C23C14/06; C30B23/08; H01L21/203

Domestic Patent References:

JPH10242586A	1998-09-11
JPH10303510A	1998-11-13
JP2002241198A	2002-08-28
JP2005210097A	2005-08-04
JP2005298319A	2005-10-27
JP2002145700A	2002-05-22
JP2005350315A	2005-12-22
JPS62231202A	1987-10-09
JPH0594874A	1993-04-16

Other References:

JPN5009010491; Ｈ．　Ｓｉｅｇｌｅ　ｅｔ　ａｌ．: 'Ｈｉｇｈ-ｑｕａｌｉｔｙ　ＧａＮ　ｇｒｏｗｎ　ｂｙ　ｍｏｌｅｃｕｌａｒ　ｂｅａｍ　ｅｐｉｔａｘｙ　ｏｎ　Ｇｅ（００１）' Ｍａｔｅｒ．　Ｒｅｓ．　Ｓｏｃ．　Ｓｙｍｐ．　Ｐｒｏｃ．Ｖｏｌ．　５７２, 1999, ｐｐ．　４５１-４５６, Ｍａｔｅｒｉａｌｓ　Ｒｅｓｅａｒｃｈ　Ｓｏｃｉｅｔｙ
JPN5009010492; Ｅ．　Ｔｒｙｂｕｓ　ｅｔ　ａｌ．: 'Ｇｒｏｗｔｈ　ｏｆ　ＩｎＮ　ｏｎ　Ｇｅ　ｓｕｂｓｔｒａｔｅ　ｂｙ　ｍｏｌｅｃｕｌａｒ　ｂｅａｍ　ｅｐｉｔａｘｙ' Ｊ．　Ｃｒｙｓｔ．　ＧｒｏｗｔｈＶｏｌ．　２７９, 20050601, ｐｐ．　３１１-３１５, Ｅｌｓｅｖｉｅｒ　Ｂ．　Ｖ．

Attorney, Agent or Firm:

Takuji Yamada
Mitsuo Tanaka
Haruo Nakano

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