To provide a group Ill-nitride/substrate structure formed by a method for obtaining the group Ill-nitride, e.g. GaN layer with good crystal quality and to provide a semiconductor device comprising at least one such structure.
The present invention provides the method for depositing or growing the group Ill-nitride layer, e.g. GaN layer 5, on a substrate 1, the substrate 1 comprising at least a Ge surface 3, preferably with hexagonal symmetry. The method comprises steps of: heating the substrate 1 to a nitridation temperature between 400°C and 940°C while exposing the substrate 1 to a nitrogen gas flow; and subsequently depositing the group Ill-nitride, e.g. GaN layer 5, onto the Ge surface 3 at a deposition temperature between 100°C and 940°C.
DEGROOTE STEFAN
UNIV BRUSSEL VRIJE
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JPN5009010492; E. Trybus et al.: 'Growth of InN on Ge substrate by molecular beam epitaxy' J. Cryst. Growth Vol. 279, 20050601, pp. 311-315, Elsevier B. V.
Mitsuo Tanaka
Haruo Nakano
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