PURPOSE: To enable a CAD layout diagram to be easily matched in pattern to a secondary electron image by a method wherein the secondary electron image is set in wiring pitch and magnification of secondary electron image basing on the edge position of a wiring pattern detected from the projection brightness distribution of the secondary electron image.
CONSTITUTION: An electron beam device 1 enables an electron beam EB to scan the surface of a specimen 2. The projection brightness distribution B of a secondary electron image on one axis of the rectangular coordinates is obtained by a projection brightness distribution forming means 4, and the widthwise edge of the wiring pattern of the uppermost wiring layer is detected by a pattern edge detection means 5, and the wiring pitch P1 on the one axis is determined by a wiring pitch determining means 6. A wiring pitch Ps is determined by an image magnification determining means 6, and the magnification M1 on the one axis of a secondary electron image is determined basing on a wiring pitch P determined on the design phase. As the magnification of a secondary electron image can be detected without taking that a wiring pattern becomes thin or thick under manufacturing conditions into consideration, a CAD layout diagram of a wiring pattern can be easily and accurately matched in pattern to a secondary electron image.
OKUBO KAZUO
ITO AKIO
