To generate only a slight coupling and noise processes by forming one strip of a strip conductor from a metal strip conductor on a dielectric layer, and by forming the other strips as the doping tab regions in the lower regions of the metal strip conductor.

A microwave strip conductor 2, consisting of a metal strip conductor 3 and a doping tab area 4, is provided on a semiconductor substrate 1. The doping tab region 4 is provided in the lower area of the metal strip conductor 3 of the semiconductor substrate 1 and may be formed through diffusion. A dielectric layer 5 of silicon dioxide, for example, is provided between the metal strip conductor 3 and the doping tab region 4. In this way, the conductor 2 comprising the metal strip conductor 3 and the doping tab region 4 transfers the signal energy to the region of the dielectric layer 5 between the metal strip conductor 3 and doping tab region 4.