Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH11186513
Kind Code:
A
Abstract:
To provide a semiconductor device, wherein the surface area of a cylindrical part constituting a cylindrical storage node is sufficiently large to keep the physical strength of the cylindrical part.
Silicon particles are formed only on an outer wall of a cylindrical part 6d through a thermal process for roughening, while an amorphous silicon film is left on an inner wall with no roughening process, so that the surface area of a storage node 6b at the outer wall of the cylindrical part is increased, keeping the physical strength at the cylindrical part with the amorphous silicon on the inner wall, and suppressing the breakage or the collapse of the cylindrical part.
Inventors:
SHIROSAKI MASAMI
TSUCHIMOTO JUNICHI
MORI KIYOSHI
TSUCHIMOTO JUNICHI
MORI KIYOSHI
Application Number:
JP35121097A
Publication Date:
July 09, 1999
Filing Date:
December 19, 1997
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/02; H01L21/20; H01L21/8239; H01L21/8242; H01L27/108; H01L29/76; H01L29/94; H01L31/119; (IPC1-7): H01L27/108; H01L21/8242
Attorney, Agent or Firm:
Kaneo Miyata (2 outside)
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