To provide an edge-light emitting semiconductor device capable of obtaining a relatively large optical output without decreasing the light emitting efficiency.
A substrate has first and second end faces disposed in parallel with each other, and a main surface for connecting the first and second end faces. An active layer is formed on the main surface. A ridge-part is disposed along a route for connecting a point on the first end faces to a point on the second end face on the active layer. The ridge is formed of a semiconductor material having a lower refractive index than that of the active layer to form a waveguide. The route is formed of a first part of the first end face side and a second part of the second end face side. A first angle is formed between a normal directed in the main surface of the first end face and the first part. A second angle is formed between a normal directed into the main surface of the second end face and the second part. Electrodes injects a current to the region along the route of the active layer.
OGAWA YOSHIHIRO
SASAKURA MASARU
MARUYAMA TAKESHI
| JPH02310975A | 1990-12-26 | |||
| JPH11330540A | 1999-11-30 | |||
| JPH08316570A | 1996-11-29 | |||
| JPH08331057A | 1996-12-13 |