Title:
ELECTRODE FOR PLACING WAFER
Document Type and Number:
Japanese Patent JP2009070836
Kind Code:
A
Abstract:
To provide an electrode for placing wafers which can suppress dielectric breakdown of a helium gas without using a mixed gas.
The electrode for placing wafers in a plasma processing apparatus use a tapered gas hole for a gas inlet pipe 5 which is provided in the main body of the electrode 1, thus suppressing dielectric breakdown due to secondary electron avalanche phenomenon and improving withstand voltage.
Inventors:
SHIRAYONE SHIGERU
ARAMAKI TORU
ARAMAKI TORU
Application Number:
JP2007234146A
Publication Date:
April 02, 2009
Filing Date:
September 10, 2007
Export Citation:
Assignee:
HITACHI HIGH TECH CORP
International Classes:
H01L21/683; H01L21/3065; H02N13/00; C23C16/46; C23C16/50
Domestic Patent References:
| JPH09129715A | 1997-05-16 | |||
| JP2004253768A | 2004-09-09 | |||
| JPH0945758A | 1997-02-14 |
Attorney, Agent or Firm:
Patent Business Corporation Takewa International Patent Office