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Title:
ｎ型超格子及びｐ型超格子を備える電子デバイス
Document Type and Number:
Japanese Patent JP6986349
Kind Code:
B2
Abstract:
A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

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Inventors:
Atanakovik, Petal
Application Number:
JP2016569627A
Publication Date:
December 22, 2021
Filing Date:
April 30, 2015
Export Citation:
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Assignee:
SILANNA UV TECHNOLOGIES PTE LTD
International Classes:
H01L33/04; H01L33/32
Domestic Patent References:
JP2005526384A
JP201244120A
Attorney, Agent or Firm:
Fukami patent office



 
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