Title:
EPITAXIAL WAFER AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH05259071
Kind Code:
A
Abstract:
PURPOSE: To provide a method of manufacturing an epitaxial wafer which is excellent in uniformity and crystallinity as a whole.
CONSTITUTION: An SiO2 layer 2 provided with windows 6 on an Si substrate 1, an epitaxially grown GaAs layer 3, an SiO2 layer 4 provided with windows 7 not overlapping the windows 6, and an epitaxially grown GaAs layer 5 are laminated in this order, where dislocations are restrained from propagating to the GaAs layer 5 through the windows 6.
Inventors:
Kosuke Asai
Application Number:
JP8802092A
Publication Date:
October 08, 1993
Filing Date:
March 11, 1992
Export Citation:
Assignee:
SUMITOMO METAL INDUSTRIES,LTD.
International Classes:
H01L21/20; (IPC1-7): H01L21/20
Attorney, Agent or Firm:
Tono Kono