To provide equipment and a method of depositing a thin film by chemical vapor deposition which enable obtaining a material having high permittivity (High-k) constituted of a metal oxide thin film on an Si substrate without oxidizing the interface with the Si substrate by small-sized equipment and at a low cost.

In the method of depositing a film through chemical vapor deposition for depositing a material having high permittivity constituted of a metal oxide film 10 on an Si substrate 20, material gas G of the metal oxide film 10 and reducing gas H2 are introduced into a reaction chamber 2 for depositing a metal layer 9 on the Si substrate 20, and then the reducing gas H2 is switched to oxidizing gas O2 and the oxidizing gas O2 is introduced into the reaction chamber 2 to deposit the metal oxide film 10.