Title:
ETCHANT FOR COMPOUND SEMICONDUCTOR AND METHOD OF ETCHING THE COMPOUND SEMICONDUCTOR USING THE SAME
Document Type and Number:
Japanese Patent JP2003023004
Kind Code:
A
Abstract:
To provide a novel etchant for a compound semiconductor which is not so hazardous and enables superior selective etching, and to provide a method of etching which enables selective etching of the compound semiconductor multilayered film into a fine pattern using the etchant.
The etchant comprises an acid aqueous solution which includes (a) water, (b) iodine salt, (c) arsenic, and (d) hydrochloric acid or surfuric acid. The etchant includes (b) 8 to 60 g of salt iodine, (c) 6 to 40 g of iodine, and (d) 10 to 80 ml of hydrochloric acid or surfuric acid as concentrated hydrochloric acid (36 wt.% HCl aqueous solution) of as dilute surfuric acid (concentrated surfuric acid/water = 1:2 (in terms of volume)), respectively, per (a) 100 ml of water.
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Inventors:
KISHIMOTO YOSHIO
MAKITA KOJI
ADACHI HIDETO
MAKITA KOJI
ADACHI HIDETO
Application Number:
JP2001208265A
Publication Date:
January 24, 2003
Filing Date:
July 09, 2001
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/308; (IPC1-7): H01L21/308
Attorney, Agent or Firm:
Ikeuchi, Sato & Partners