Title:
Equipment and methods for producing self-supporting CVD polycrystalline diamond film
Document Type and Number:
Japanese Patent JP6353986
Kind Code:
B2
Abstract:
In a system and method of growing a diamond film, a cooling gas flows between a substrate and a substrate holder of a plasma chamber and a process gas flows into the plasma chamber. In the presence of an plasma in the plasma chamber, a temperature distribution across the top surface of the substrate and/or across a growth surface of the growing diamond film is controlled whereupon, during diamond film growth, the temperature distribution is controlled to have a predetermined temperature difference between a highest temperature and a lowest temperature of the temperature distribution. The as-grown diamond film has a total thickness variation (TTV)<10%, <5%, or <1%; and/or a birefringence between 0 and 100 nm/cm, 0 and 80 nm/cm, 0 and 60 nm/cm, 0 and 40 nm/cm, 0 and 20 nm/cm, 0 and 10 nm/cm, or 0 and 5 nm/cm.
Inventors:
David Savens
Chao Liu
Charles Dee Tanner
Wenchin Shui
Chao Liu
Charles Dee Tanner
Wenchin Shui
Application Number:
JP2017532642A
Publication Date:
July 04, 2018
Filing Date:
December 11, 2015
Export Citation:
Assignee:
II-VI INCORPORATED
International Classes:
C23C16/27; C01B32/26; C23C16/511
Domestic Patent References:
| JP2000096246A | ||||
| JP10508069A | ||||
| JP2014505363A | ||||
| JP2004244298A | ||||
| JP7086385A | ||||
| JP2110925A |
Foreign References:
| WO2013087702A2 | ||||
| WO2013087706A1 |
Attorney, Agent or Firm:
Masaharu Takamura
Hiroki Kashima
Hiroki Kashima