Title:
ETCHING APPARATUS
Document Type and Number:
Japanese Patent JP3585591
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To manufacture an etching apparatus by which an etching rate is uniform on a large wafer, which is small and light in weight and whose maintenance property is high.
SOLUTION: A stirring electric field system 150 is arranged around a wafer, and it is provided with a high-frequency, intermediate-frequency and low-frequency stirring power supply 152, with a stirring electrode 151, with an amplifier 153 and with a phase controller 154. Electrons or ions are stirred, the activation of a reaction gas is promoted, the density of a plasma is made uniform, and the uniformity of the etching rate is increased.
Inventors:
Shunpei Yamazaki
Application Number:
JP21253695A
Publication Date:
November 04, 2004
Filing Date:
July 29, 1995
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H05H1/46; C23F4/00; H01J37/32; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23F4/00; H05H1/46
Domestic Patent References:
| JP3222415A | ||||
| JP5062935A | ||||
| JP1106432A | ||||
| JP9503350A |
Attorney, Agent or Firm:
Shinichi Tamaki