Title:
ETCHING METHOD AND ETCHING DEVICE
Document Type and Number:
Japanese Patent JP2004319972
Kind Code:
A
Abstract:
To restrain surface roughness and striation of a resist film at etching treatment with the resist film comprising an araliphatic acrylate resin and/or araliphatic methacrylate resin as a mask.
In this etching method, a process gas is introduced into an air-tight processing chamber to make into plasma, and plasma etching treatment is performed for a film to be etched formed on a semiconductor wafer W in a processing chamber 2, for example, a silicon oxide film, with a resist comprising the araliphatic acrylate resin and/or araliphatic methacrylate resin, for example, ArF photo resist, as a mask. The plasma etching treatment is performed while keeping a surface temperature of the semiconductor wafer W at a low temperature of 20°C or below.
Inventors:
FUJIMOTO KIWAMU
Application Number:
JP2004059674A
Publication Date:
November 11, 2004
Filing Date:
March 03, 2004
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/311; H01L21/3065; H01L21/027; H01L21/316; (IPC1-7): H01L21/3065
Attorney, Agent or Firm:
Miaki Kametani
Tetsuo Kanamoto
Koji Hagiwara
Tetsuo Kanamoto
Koji Hagiwara