Title:
ETCHING METHOD
Document Type and Number:
Japanese Patent JPS5988826
Kind Code:
A
Abstract:
PURPOSE:To obtain multi-layer wiring with high reliability by providing a photo sensitive resin mask to a poly-Si using the Cl system of F system gas and excuting parallel flat plate plasma etching or reactive ion etching after selecting an etching coefficient ratio of both films to a specific value. CONSTITUTION:A phosphorus-added poly-Si 2 is provided to an SiO2 film 3 on an Si substrate 4 and a pattern of positive photo sensitive resin film 1 is formed. The reactive ion etching is carried out under the condition that 50cc/min CCl3F, 4.4cc/min O2, pressure of 3.5 Pa, 13.56MHz, 350W. At this time, a ratio of the etching coefficient of poly-Si and etching coefficient of photo sensitive resin, namely the selection coefficient is 1.52 and the tapered layers 1''', 2''' can be obtained with advancement of the etching. The selection ratio of the phosphorus- added poly-Si and photo sensitive resin film changes is the range of 1.47-2.00 while the high frequency power is in the range of 250-380W. Therefore, the highly controllable taper etching is possible by freely changing the selection ratio by a high frequency power and by the reactive ion etching or parallel flat plate plasma etching.
Inventors:
KATOU SHIGEKI
Application Number:
JP19855482A
Publication Date:
May 22, 1984
Filing Date:
November 12, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C23F4/00; H01L21/302; H01L21/3065; H01L21/3213; (IPC1-7): C23F1/08
Attorney, Agent or Firm:
Uchihara Shin