EXPOSING METHOD AND PHOTOMASK EMPLOYED THEREIN

Title:

EXPOSING METHOD AND PHOTOMASK EMPLOYED THEREIN

Document Type and Number:

Japanese Patent JPH05275303

Kind Code:

A

Abstract:

PURPOSE: To enhance yield in an exposing process employing a chromeless type phase shift mask.

CONSTITUTION: After performing first exposure to photoresist on the surface of a semiconductor wafer using a phase shifter 3 formed in a chromeless type phase shift mask 1, second exposure is performed at the same exposure region of the photoresist using a light shielding pattern 5 at least partially similar to the edge pattern of the phase shifter 3 thus preventing transfer of a defect 4.

Inventors:

Kusakabe Masaru
Yoshiyuki Watanuki
Moriuchi Noboru

Application Number:

JP7176892A

Publication Date:

October 22, 1993

Filing Date:

March 30, 1992

Export Citation:

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Assignee:

株式会社日立製作所

International Classes:

G03F1/34; G03F1/68; G03F7/20; H01L21/027; (IPC1-7): H01L21/027; G03F1/08; G03F7/20

Attorney, Agent or Firm:

Yamato Tsutsui

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