Title:
EXPOSURE SYSTEM AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3696185
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the deterioration of a resist pattern which is caused by outgas from a resist film that has been subjected to pattern exposure.
SOLUTION: A wafer stage 3 for supporting a wafer 4 is provided at the bottom of a chamber 1. A first exposure optical system 5 for forming patterns, and a second exposure optical system 6 for detecting the outgas, are provided above the wafer stage 3. The optical system 5 carries out pattern exposure by selectively irradiating the resist film formed on the wafer 4 with extreme ultraviolet rays. The second optical system 6 carries out test exposure by locally irradiating the periphery of the resist film formed on the wafer 4 with extreme ultraviolet rays. An outgas detection means 7 for detecting the rate of the outgas from the resist film is provided at the side of the chamber 1.
Inventors:
Masataka Endo
Masako Sasako
Masako Sasako
Application Number:
JP2002205779A
Publication Date:
September 14, 2005
Filing Date:
July 15, 2002
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G03F7/20; H01L21/027; (IPC1-7): H01L21/027; G03F7/20
Domestic Patent References:
| JP2000133583A | ||||
| JP2002145962A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Teshima Masaru
Atsushi Fujita
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Teshima Masaru
Atsushi Fujita