To easily obtain a surface roughness without mirror finishing or smoothing, by providing a blade with a slant edge for forming a tapered section of a specified size and an R-edge for cutting an insulator layer which is continuously formed with the slant edge at the end of it.
A cutting blade 4 for an external semiconductive layer is fed in the direction F as shown by an arrow in the Figure, while revolving around a cable 1 to cut off an external semiconductor layer 3 and, after that, it is stopped and is allowed to go outside to form a tapered section. The cutting blade 4 is provided with a slant edge 50 for forming a tapered section of the size L longer than the slant side length K of the tapered section. Continuously with the slant edge 50, an R-edge 49 is formed at the end of the slant edge 50. As a result, an insulator layer 8 is smoothly cut by the R-edge 49 and smoothing or mirror finishing can be eliminated. Since the tapered section can be formed immediately by the slant edge 50 for forming a taper, a simple automatic cutting device without a complicated feeding mechanism for forming a taper can be used.
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MIZOGUCHI TOKU
KAMIHIRO YASUKATSU
KANJO HIROHISA
