Title:
FIELD EFFECT TRANSISTOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPS6436076
Kind Code:
A
Abstract:
PURPOSE: To obtain an FET device which has wide applications by forming a semiconductor layer, using a specified coherent conductive org. polymer. CONSTITUTION: The semiconductor layer is made of a coherent conductive org. polymer, selected among poly(acethylene, thienylene vinylene, furanylene vinylene) and their substituted derivs. On a substrate, gate electrodes, insulation layer, source and drain contacts, and conductive polymer layer are formed in this order. Before forming this polymer layer, the costly manufacturing process of the FET device can be inspected sufficiently.
Inventors:
FUIRITSUPU CHIYAARUZU AREN
JIEREMII HENRII BAROOZU
RICHIYAADO HENRII FURENDO
JIEREMII HENRII BAROOZU
RICHIYAADO HENRII FURENDO
Application Number:
JP16110188A
Publication Date:
February 07, 1989
Filing Date:
June 30, 1988
Export Citation:
Assignee:
BRITISH PETROLEUM CO
International Classes:
H01L51/05; H01L29/76; H01L29/78; H01L29/786; H01L51/30; H01L51/00; (IPC1-7): H01L29/28; H01L29/78
Attorney, Agent or Firm:
Haruo Hamada