Title:
FILM FORMATION CAPABLE OF REGULATING CRYSTAL ORIENTATION PROPETY OF THIN FILM
Document Type and Number:
Japanese Patent JPH11172426
Kind Code:
A
Abstract:
To provide a method capable of simply and freely regulating the crystal orientation properties of a thin film.
In this method for forming the thin film by a sputtering method, a mechanism in which the vicinity of a cathode is provided with a coil for rf induction coupling discharge for supporting magnetron discharge is used, and by regulating rf electric power to be applied to the induction coil, the crystal orientation properties of the thin film to be formed are regulated. The rf electric power is preferably regulated to 10 to 200 W.
Inventors:
MORITA TADASHI
YAMAMOTO NAOSHI
MATSUURA MASAMICHI
YAMAMOTO NAOSHI
MATSUURA MASAMICHI
Application Number:
JP33581997A
Publication Date:
June 29, 1999
Filing Date:
December 05, 1997
Export Citation:
Assignee:
ULVAC CORP
International Classes:
C23C14/34; C23C14/35; C23C14/54; (IPC1-7): C23C14/34; C23C14/35; C23C14/54
Attorney, Agent or Firm:
Kinichi Kitamura (3 others)