PURPOSE: To uniformly flatten the film deposited on a rugged substrate by providing an electrode in opposition to the substrate to be treated, and uniformizing the high-frequency voltage to be impressed on a substrate holder in the title thin film forming device utilizing plasma.
CONSTITUTION: A gaseous mixture of Ar and O2 is introduced into a plasma producing chamber 13 from an inlet 14, a microwave is supplied from a microwave source 11 through a waveguide 12, and a magnetic field is formed by the coil 15 provided around the chamber 13. Consequently, high-density plasma is produced in the plasma producing chamber 13. A part of the plasma infiltrates into a reaction chamber 16 through the opening of the plasma producing chamber, gaseous SiH4 is simultaneously supplied from an inlet 21, and the chamber is depressurized by an evacuation system 22. A mesh electrode 23 is provided between the opening of the plasma producing chamber 13 and the substrate holder 18, a high-frequency bias power is impressed on the substrate holder 18 from an electric power source 17, and the thin film of SiO2 is formed on the substrate 19. The bias high-frequency electric field for the substrate holder 18 is uniformized by the presence of the electrode 23, and hence the thickness of the thin SiO2 film on the substrate 19 is uniformized even if the substrate is large and rugged.
UEDA TETSUYA
TANIMURA SHOICHI
FUJITA TSUTOMU
KAKIUCHI TAKAO
YAMAMOTO HIROSHI
