PURPOSE: To stably form a deposited film on a substrate at a high speed by introducing a microwave into a reaction vessel through a waveguide with the center of the strong electric field surface facing the substrate to generate a glow discharge, and dissociating a gaseous reactant with the discharge.
CONSTITUTION: Plural cylindrical substrates 105 are arranged in the reaction vessel 101 evacuated through an exhaust pipe 104 to surround a discharge space 106. At least one kind of gaseous reactant is introduced into the reaction vessel 101. A microwave is simultaneously introduced from rectangular waveguides 103a and 103b through windows 102a and 102b. A glow discharge is generated by the energy of the microwave, hence the gaseous reactant is dissociated, and a deposited film is formed on the substrate 105. In the microwave plasma CVD device, the centers of the strong electric field surface of the waveguides 103a and 103b are confronted with the substrate 105, and the relative angle between both waveguides 103a and 103b is controlled to 90°. In this case, 4n- substrates 105 [(n) is an integer of ≥1] are preferably arranged.
TAKEI TETSUYA
SAITO KEISHI
ARAI TAKASHI
HASHIZUME JUNICHIRO
