PURPOSE: To form a film excellent in a throwing power by a method wherein a negative periodic potential, whose pulse width is smaller than half a period and larger than one microsecond, is applied onto a substrate in a film forming process.
CONSTITUTION: A sputtering electrode 108 and a substrate electrode 104 are provided inside a grounded vacuum vessel 101 filled with a sputtering gas facing each other. A negative high potential and a negative bias potential are applied onto the electrodes 108 and 104 respectively to form a required film on a substrate 102 on the electrode 104. In this process, a negative periodic bias potential, whose pulse width is smaller than half a period and larger than one microsecond, is applied onto the substrate 102 for a part of a film forming process or through the process. Two or more kinds of voltage waveforms of the bias potential applied on the substrate 102 are used in a single film forming process. By these processes, a film excellent in a throwing power can be formed.
KOBAYASHI HIDE
SHIMAMURA HIDEAKI
FUJITA MASAHIRO
NAKAMURA HIROSHI
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