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Title:
FORMATION OF HIGH-TEMPERATURE SUPERCONDUCTING MULTILAYER INTEGRATED CIRCUIT AND HIGH-TEMPERATURE SUPERCONDUCTING MULTILAYER INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP2959439
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To form a high-temperature superconducting multilayer integrated circuit of a structure, wherein the epitaxial performance of an uppermost layer high- temperature superconducting film and lower layer high-temperature superconducting films is easy to deteriorate due to a surface damage in a processing process, the more the disarrangement of the epitaxial property goes to the upper layers, the more it is increased and the degree of a reduction in the superconducting characteristics of the high-temperature superconducting film and the insulation characteristics of the insulating films is increased.
SOLUTION: Lower layer high-temperature superconducting films 21 and 23 and insulating films 22 and 24 are subjected to continuous epitaxial growth on a substrate 20 in the same vacuum excluding the uppermost layer high-temperature superconducting film 31, whereby a film, which is superior in epitaxial property, is formed. After a plurality of times of processings are performed on this multilayer epitaxial film, the film 31 is epitaxially grown. The connection between the film 31 and the films 21 and 23 and the connection between the films 21 and 23 are respectively made through contact holes 28 and 29 utilizing the film 31 and utilizing an edge bonding.


Inventors:
HIDAKA MUTSUO
Application Number:
JP17736795A
Publication Date:
October 06, 1999
Filing Date:
July 13, 1995
Export Citation:
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Assignee:
NIPPON DENKI KK
International Classes:
H01L39/00; H01B12/02; H01L39/02; H01L39/24; (IPC1-7): H01L39/00; H01B12/02; H01L39/02; H01L39/24
Domestic Patent References:
JP590653A
JP5251769A
JP3229473A
JP474404A
Attorney, Agent or Firm:
Matsuura