Title:
FORMATION OF METALLIC THIN FILM
Document Type and Number:
Japanese Patent JPH04363018
Kind Code:
A
Abstract:
PURPOSE: To greatly improve reliability and yield of an integrated circuit by forming a metallic thin film of good step coating properties and smooth surface configuration at a low temperature.
CONSTITUTION: A silicon substrate 1 is immersed in liquid 3 containing metal or semiconductor in solute, metal or semiconductor is attached to a substrate surface and vapor chemical growth is carried out successively; then, a metallic thin film 5 of smooth surface configuration is deposited all over using metal or semiconductor as a core.
Inventors:
SUGAI KAZUMI
NIIZAWA TSUTOMU
KISHIDA SHUNJI
OKABAYASHI HIDEKAZU
NIIZAWA TSUTOMU
KISHIDA SHUNJI
OKABAYASHI HIDEKAZU
Application Number:
JP25327791A
Publication Date:
December 15, 1992
Filing Date:
October 01, 1991
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/28; H01L21/285; H01L21/3205; (IPC1-7): H01L21/28; H01L21/285
Domestic Patent References:
| JPH0457323A | 1992-02-25 | |||
| JPH0370129A | 1991-03-26 |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)