Title:
FORMING METHOD OF THROUGH HOLE
Document Type and Number:
Japanese Patent JPS6079720
Kind Code:
A
Abstract:
PURPOSE:To unnecessitate the performance of a mask matching process as well as to obtain a small through hole by a method wherein the through hole is formed on a photosensitive insulator, and said hole is used as a photomask of the base insulating film. CONSTITUTION:A base insulating layer 7' is deposited on the surface of the lower conductive layer 6, a solution of photosensitive insulator is coated on the surface of the insulating film 7', a solvent medium is evaporated at the temperature range between the room temperature and 150 deg.C, and a photoresistive insulating layer 7'' is formed. Exposing and developing processes are performed using a prescribed photomask, and a through hole is formed on the insulating layer 7''. Using said insulating layer 7'' as a photomask, a through hole is formed on the insulating layer 7'. The taper angle of the through hole part is changed from a reverse taper angle theta1 to a mormal taper angle theta2. As a result, a small through hole can be obtained.
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Inventors:
KENMOCHI AKIHIRO
KOSHIMO TOSHIYUKI
KOSHIMO TOSHIYUKI
Application Number:
JP18676283A
Publication Date:
May 07, 1985
Filing Date:
October 07, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/3205; H01L21/28; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Katsuo Ogawa