PURPOSE: To obtain a highly precise X-ray mask with superior reproducibility by forming an X-ray absorber pattern of the X-ray mask by a selective CVD method.
CONSTITUTION: An X-ray absorber pattern 31 of an X-ray mask is formed by a selective CVD method. That is, an absorber deposition blocking film 27a is formed on the region except the absorber pattern forming region of a membrane 23, and absorber is deposited on the region exposed from the film 27a of the membrane 23 by the selective CVD method. Tungsten is preferably used for absorber material, and the absorber deposition blocking film 27a is preferable to be constituted of an insulating film. Thereby an X-ray mask having a highly precise absorber pattern can be obtained with superior reproducibility.
OTA TSUNEAKI
JINBO HIDEYUKI
YAMASHITA YOSHIO
Next Patent: TRANSMITTER AND RECEIVER FOR AVOIDING FAULT OF RADIO