Title:
GAS SUPPLY UNIT AND CHEMICAL VAPOR DEPOSITION APPARATUS
Document Type and Number:
Japanese Patent JP2009191355
Kind Code:
A
Abstract:
To provide a gas supply unit and a chemical vapor deposition apparatus with which by-products resulting from a chemical vapor deposition process is immediately exhausted, so that a high quality thin film is deposited on the surface of a deposition object, a cleaning cycle for the inside of a chamber is extended, for greater productivity.
The gas supply unit for supplying a reactive gas for a chemical vapor deposition can include a hot wire part configured to pyrolyze the reactive gas, an ejection part configured to eject the reactive gas towards the hot wire part, and a suction part disposed adjacent to the hot wire part and configured to suck in and exhaust a by-product of the reactive gas.
Inventors:
KANG HYUNG-DONG
Application Number:
JP2008185301A
Publication Date:
August 27, 2009
Filing Date:
July 16, 2008
Export Citation:
Assignee:
SAMSUNG ELECTRO MECH
International Classes:
C23C16/48; C23C16/455; C23C16/46; C23C16/54; C23C16/56; H01L21/205; H01L21/285
Domestic Patent References:
JP2002105647A | 2002-04-10 | |||
JP2006278616A | 2006-10-12 | |||
JPH02252239A | 1990-10-11 | |||
JPH06208955A | 1994-07-26 | |||
JP2006269671A | 2006-10-05 | |||
JP2002069644A | 2002-03-08 | |||
JP2003527478A | 2003-09-16 | |||
JP2003133230A | 2003-05-09 | |||
JP2001168029A | 2001-06-22 | |||
JP2001230211A | 2001-08-24 | |||
JP2000303182A | 2000-10-31 |
Attorney, Agent or Firm:
Akihiro Ryuka
Kazutoshi Iiyama
Akashi Hideya
Higashiyama Tadayoshi
Kazutoshi Iiyama
Akashi Hideya
Higashiyama Tadayoshi