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Title:
GAS SUPPLY UNIT AND CHEMICAL VAPOR DEPOSITION APPARATUS
Document Type and Number:
Japanese Patent JP2009191355
Kind Code:
A
Abstract:

To provide a gas supply unit and a chemical vapor deposition apparatus with which by-products resulting from a chemical vapor deposition process is immediately exhausted, so that a high quality thin film is deposited on the surface of a deposition object, a cleaning cycle for the inside of a chamber is extended, for greater productivity.

The gas supply unit for supplying a reactive gas for a chemical vapor deposition can include a hot wire part configured to pyrolyze the reactive gas, an ejection part configured to eject the reactive gas towards the hot wire part, and a suction part disposed adjacent to the hot wire part and configured to suck in and exhaust a by-product of the reactive gas.


Inventors:
KANG HYUNG-DONG
Application Number:
JP2008185301A
Publication Date:
August 27, 2009
Filing Date:
July 16, 2008
Export Citation:
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Assignee:
SAMSUNG ELECTRO MECH
International Classes:
C23C16/48; C23C16/455; C23C16/46; C23C16/54; C23C16/56; H01L21/205; H01L21/285
Domestic Patent References:
JP2002105647A2002-04-10
JP2006278616A2006-10-12
JPH02252239A1990-10-11
JPH06208955A1994-07-26
JP2006269671A2006-10-05
JP2002069644A2002-03-08
JP2003527478A2003-09-16
JP2003133230A2003-05-09
JP2001168029A2001-06-22
JP2001230211A2001-08-24
JP2000303182A2000-10-31
Attorney, Agent or Firm:
Akihiro Ryuka
Kazutoshi Iiyama
Akashi Hideya
Higashiyama Tadayoshi