To provide gate breakdown voltage healing and a healing equipment wherein the production cost is reduced, by preventing the reliability decrease of a grate oxide film and miniaturizing the equipment.

A wafer 5 wherein a gate oxide film is formed on the surface is inserted in a spin dry apparatus 2, and the rear of the wafer 5 is fixed with a vacuum chuck 3. The wafer 5 fixed with the vacuum chuck 3 is rotated at a high speed in the arrow direction with a motor. Static electricity is generated on the surface of the wafer 5 by friction between the surface of the wafer 5 and dry air. By this static electricity, a current flows in a part, where the Si-O bond is cut, in a gate oxide film on the surface of the wafer, and temperature is increased by federated Joule heat. When the temperature reaches melting temperature of SiO2, it generates flow, and stable Si-O bond is formed in the part where the Si-O bond is cut.