Title:
量子井戸と超格子とを有するIII族窒化物系発光ダイオード構造
Document Type and Number:
Japanese Patent JP5363236
Kind Code:
B2
Abstract:
A Group III nitride based semiconductor device is disclosed, comprising: a doped Group III nitride layer; and a gallium nitride based superlattice directly on the doped Group III nitride layer, the gallium nitride superlattice being doped with an n-type impurity and having at least two periods of alternating layers of In X Ga 1-X N and In Y Ga 1-Y N, where 0 ¤ X < 1 and X is not equal to Y and wherein a thickness of a first of the alternating layers is less than a thickness of a second of the alternating layers.
Inventors:
David Todd Emerson
James Ibetson
Michael John Auroulin
Howard Dean Nordby Junior
Amber Christine Abare
Michael John Bergman
Kathleen Marie Dover Spike
James Ibetson
Michael John Auroulin
Howard Dean Nordby Junior
Amber Christine Abare
Michael John Bergman
Kathleen Marie Dover Spike
Application Number:
JP2009184911A
Publication Date:
December 11, 2013
Filing Date:
August 07, 2009
Export Citation:
Assignee:
CREE INC.
International Classes:
H01L33/32; H01L33/06
Domestic Patent References:
| JP2000349337A | ||||
| JP1140850A | ||||
| JP2000150957A | ||||
| JP2000349393A | ||||
| JP1041549A |
Attorney, Agent or Firm:
Asamura patent office