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Title:
GROUP III NITRIDE SEMICONDUCTOR LAYER LAMINATED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2010263043
Kind Code:
A
Abstract:

To provide a group III nitride semiconductor layer laminated substrate with which a semiconductor device having high extraction efficiency of light is obtained and a method of manufacturing the same, and a group III nitride semiconductor device.

The group III nitride semiconductor layer laminated substrate 1 is obtained by sticking together a group III nitride semiconductor layer 20a and a base substrate 10 whose chemical composition is different from that of the group III nitride semiconductor layer 20a. The group III nitride semiconductor layer 20a includes a photonic crystal structure layer 20p having a principal surface 20n joined to the base substrate 10 and periodically varying in refractive index in two dimensions parallel to the principal surface 20n.

COPYRIGHT: (C)2011,JPO&INPIT


Inventors:
SAITO HIROHISA
MATSUBARA HIDEKI
AKAHA YOSHIHIRO
YOSHIMOTO SUSUMU
Application Number:
JP2009112133A
Publication Date:
November 18, 2010
Filing Date:
May 01, 2009
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L33/32; H01L21/02; H01L21/20; H01L21/265
Domestic Patent References:
JP2003224042A2003-08-08
JP2008166567A2008-07-17
JP2008010766A2008-01-17
JP2008300562A2008-12-11
JP2007220899A2007-08-30
JP2006287237A2006-10-19
JP2007096330A2007-04-12
JP2008538658A2008-10-30
JP2005317959A2005-11-10
JP2006156901A2006-06-15
JP2003224042A2003-08-08
JP2008166567A2008-07-17
Foreign References:
WO2008060594A22008-05-22
WO2008096168A12008-08-14
WO2008060594A22008-05-22
WO2008096168A12008-08-14
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki



 
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