Title:
GROWING METHOD OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3459676
Kind Code:
B2
Abstract:
PURPOSE: To obtain a single crystal without producing cracks.
CONSTITUTION: A cylindrical zirconia refractory material as the refractory material around a crucible is preliminarily divided into two parts and assembled in such a manner that the one space is a little larger than the other space. The crucible is heated by high frequency induction heating to melt the source material, and temp. of the molten liquid is properly controlled for deposition on the seed. Thus, the convection flow is changed to flow to the crucible wall where the larger space between the refractory materials is made. Thereby, Ir floating in the flowing position of the convection moves to the wall of the crucible and deposits on the crucible wall. Then, the lower end of the seed crystal is brought into contact with the molten liquid and the seed is pulled up to develope into the crystal. Thereby, crack is prevented in a single crystal which easily causes cracks.
Inventors:
Yasushi Kurata
Kazuo Kurashige
Hiroyuki Ishibashi
Kazuo Kurashige
Hiroyuki Ishibashi
Application Number:
JP5967094A
Publication Date:
October 20, 2003
Filing Date:
March 30, 1994
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
C30B15/00; C30B15/10; C30B15/14; C30B15/22; C30B29/34; H01L21/208; (IPC1-7): C30B15/14; C30B29/34
Domestic Patent References:
| JP62288195A | ||||
| JP5964590A | ||||
| JP7157390A | ||||
| JP503270B1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa (1 person outside)
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