To provide a Hall element which improves ESD voltage resistance, and a semiconductor device including the Hall element.

In a Hall element including a magneto-sensitive part which is cross-shaped and includes: an input terminal couple and an output terminal couple in confronted distal end portions, an interval in the output terminal couple is longer than that in the input terminal couple. On a substantially square-shaped substrate, four wiring parts, four electrode parts, four terminals, and one magneto-sensitive part are disposed. First and second output terminals 313 and 314 and first and second input terminals 311 and 312 are electrically connected to the terminals of the magneto-sensitive part, respectively, in such a manner that a line segment L_out representing the interval in the output terminal coupler becomes longer in comparison with a line segment L_in representing the interval in the input terminal couple.