To suppress creeping discharge and to suppress property deterioration, durability deterioration and reliability deterioration of a semiconductor element due to dicing.
While forming an insulator film 3 to an end portion of a chip constituting an SiC semiconductor device, a groove part 3b surrounding a cell region is formed in a portion covered with a passivation film 6 in the insulator film 3. Thus, even when a crack occurs by cutting the insulator film 3 during dicing, the crack is intercepted by the groove part 3b so as not to be propagated inside more. Therefore, even in a structure where creeping discharge can be suppressed by forming the insulator film 3 to a chip end portion so as not to reveal an SiC surface, characteristics of a semiconductor element can be prevented from being deteriorated.
MIZUNO SHOJI
KONISHI MASAKI
WATANABE YUKIHIKO
TOYOTA MOTOR CORP
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