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Title:
HIGH PRESSURE PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2007250589
Kind Code:
A
Abstract:

To provide a technology for performing film deposition with high in-plane uniformity by solving the problem of temperature stability of a stage heater based on low thermal conductivity of a pressure withstanding vessel, when a film is deposited on a substrate by supplying processing fluid containing supercritical fluid and film deposition material into the pressure withstanding vessel.

A pressure withstanding vessel is constituted to have an inner film deposition space F formed by an upper lid 21 of the apparatus body 2, a pressure withstanding frame 20, and a stand 3 for mounting a wafer W. The pressure withstanding vessel is provided with a stage heater 4 mounting a wafer W and provided with a heating element; a heat insulation layer 51 provided on the lower side of the stage heater 4 and having a thermal conductivity lower than that of the material of the pressure withstanding vessel; and a temperature regulation layer 53 provided with a temperature regulating portion for delivering/receiving heat to/from the outside of the pressure withstanding vessel, and interposed between the heat insulation layer 51 and the mounting stand body 31 forming the base portion of the pressure withstanding vessel.

COPYRIGHT: (C)2007,JPO&INPIT


Inventors:
MATSUMOTO KENJI
KOMIYA TAKAYUKI
KONDO HIDEKAZU
Application Number:
JP2006068107A
Publication Date:
September 27, 2007
Filing Date:
March 13, 2006
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
KONDO HIDEKAZU
International Classes:
H01L21/285; C23C16/452; C23C16/18
Domestic Patent References:
JP2007162081A2007-06-28
JP2004091827A2004-03-25
JP2005187879A2005-07-14
Attorney, Agent or Firm:
Toshio Inoue