Title:
HIGH PURITY SILICON TETRACHLORIDE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP3889409
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high purity silicon tetrachloride capable of preventing the clogging of an evaporator, or the like, by its residue when using it in a large quantity by evaporation.
SOLUTION: (1) The high purity silicon tetrachloride has a concentration less than 50 ppmw Si2HCl5. (2) This high purity silicon tetrachloride is that described in (1) which has less than 2 ppbw Fe, less than 1 ppbw Cr, and less than 0.5 ppbw Zn. (3) The manufacturing method for the high purity silicon tetrachloride is described in (1) or (2), and in which trichlorosilane separated from silicon tetrachloride by distillation of a by-produced gas exhausted in the reduction process of a multi-crystalline silicon by Siemens method is further distilled at a reflux ratio of not less than 7.5.
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Inventors:
Noboru Okamoto
Application Number:
JP2004124333A
Publication Date:
March 07, 2007
Filing Date:
April 20, 2004
Export Citation:
Assignee:
Sumitomo Titanium Co., Ltd.
International Classes:
C01B33/107; (IPC1-7): C01B33/107
Domestic Patent References:
| JP57135712A | ||||
| JP62277193A | ||||
| JP11049508A | ||||
| JP2002362917A |
Attorney, Agent or Firm:
Michio Mori
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